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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4381 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) *DC Current Gain: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) *Complement to Type 2SA1667 APPLICATIONS *Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 150 V 150 V 6 V 2 A 1 A 25 W .cn mi e IC Collector Current-Continuous IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4381 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.07A 1.0 V ICBO Collector Cutoff Current VCB= 150V ; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 A hFE DC Current Gain IC= 0.7A ; VCE= 10V 60 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain--Bandwidth Product Switching Times ton Turn-On Time tstg Storage Time w w scs .i w IE= -0.2A ; VCE= 12V .cn mi e 35 pF 15 MHz 1.0 s IC= 1A; IB1= -IB2= 0.1A; VCC= 20V; RL= 20 3.0 s tf Fall Time 1.5 s isc Websitewww.iscsemi.cn 2 |
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